Specification	EMH2604-TL-H

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4 A, 3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	4.7 nC
Input Capacitance (Ciss) (Max) @ Vds	345 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.2 W
Supplier Device Package	8-EMH
Technology	MOSFET (Metal Oxide)

EMH2604 Series

Pch+Nch Power MOSFET, 20V, 4A, 45mΩ, -20V, -3A, 85mΩ, Complementary Dual EMH8

Part	Configuration	Power - Max [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Feature	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature
ON Semiconductor EMH2604-TL-H	N and P-Channel	1.2 W	8-EMH	3 A 4 A	Surface Mount	4.7 nC	20 V	Logic Level Gate	MOSFET (Metal Oxide)	345 pF	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

EMH2604 is a Pch+Nch Power MOSFET, 20V, 4A, 45mΩ, -20V, -3A, 85mΩ, Complementary Dual EMH8 for General-Purpose Switching Device.