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CNY17F1M

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ON Semiconductor

6-PIN DIP HIGH BVCEO PHOTOTRANSISTOR OUTPUT OPTOCOUPLER

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DocumentsDatasheet Product Change Notice EN +1

Isolators

CNY17F1M

Active

ON Semiconductor

6-PIN DIP HIGH BVCEO PHOTOTRANSISTOR OUTPUT OPTOCOUPLER

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CNY17F1M

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	80 %
Current Transfer Ratio (Min) [Min]	40 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Output Type	1.81 mOhm
Package / Case	6-DIP
Package / Case	0.3 in
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	4 µs
Rise / Fall Time (Typ) [custom]	3.5 µs
Supplier Device Package	6-DIP
Turn On / Turn Off Time (Typ)	3 µs, 2 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.35 V
Voltage - Isolation	4170 Vrms
Voltage - Output (Max) [Max]	70 V

CNY17F1M Series

6-Pin DIP High BVCEO Phototransistor Output Optocoupler

Part	Number of Channels	Input Type	Current Transfer Ratio (Min) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Output (Max) [Max]	Package / Case	Package / Case	Package / Case	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Forward (Vf) (Typ)	Current Transfer Ratio (Max)	Current - Output / Channel	Turn On / Turn Off Time (Typ)	Current - DC Forward (If) (Max) [Max]	Output Type	Mounting Type	Voltage - Isolation	Supplier Device Package	Vce Saturation (Max) [Max]	Package / Case
ON Semiconductor CNY17F1TVM	1	DC	40 %	100 °C	-40 °C	70 V	6-DIP	10.16 mm	10.16 mm	4 µs	3.5 µs	1.35 V	80 %	50 mA	2 µs 3 µs	60 mA	1.81 mOhm	Through Hole	4170 Vrms	6-DIP	400 mV
ON Semiconductor CNY17F1VM	1	DC	40 %	100 °C	-40 °C	70 V	6-DIP		7.62 mm	4 µs	3.5 µs	1.35 V	80 %	50 mA	2 µs 3 µs	60 mA	1.81 mOhm	Through Hole	4170 Vrms	6-DIP	400 mV	0.3 in
ON Semiconductor CNY17F3M	1	DC	100 %	100 °C	-40 °C	70 V	6-DIP		7.62 mm	4 µs	3.5 µs	1.35 V	200 %	50 mA	2 µs 3 µs	60 mA	1.81 mOhm	Through Hole	4170 Vrms	6-DIP	400 mV	0.3 in
ON Semiconductor CNY17F1SM	1	DC	40 %	100 °C	-40 °C	70 V	6-SMD Gull Wing			4 µs	3.5 µs	1.35 V	80 %	50 mA	2 µs 3 µs	60 mA	1.81 mOhm	Surface Mount	4170 Vrms	6-SMD	400 mV
ON Semiconductor CNY17F1SR2M	1	DC	40 %	100 °C	-40 °C	70 V	6-SMD Gull Wing			4 µs	3.5 µs	1.35 V	80 %	50 mA	2 µs 3 µs	60 mA	1.81 mOhm	Surface Mount	4170 Vrms	6-SMD	400 mV
ON Semiconductor CNY17F4M	1	DC	160 %	100 °C	-40 °C	70 V	6-DIP		7.62 mm	4 µs	3.5 µs	1.35 V	320 %	50 mA	2 µs 3 µs	60 mA	1.81 mOhm	Through Hole	4170 Vrms	6-DIP	400 mV	0.3 in
ON Semiconductor CNY17F1SR2M	1	DC	40 %	100 °C	-40 °C	70 V	6-SMD Gull Wing			4 µs	3.5 µs	1.35 V	80 %	50 mA	2 µs 3 µs	60 mA	1.81 mOhm	Surface Mount	4170 Vrms	6-SMD	400 mV
ON Semiconductor CNY17F1VM	1	DC	40 %	100 °C	-40 °C	70 V	6-DIP		7.62 mm	4 µs	3.5 µs	1.35 V	80 %	50 mA	2 µs 3 µs	60 mA	1.81 mOhm	Through Hole	4170 Vrms	6-DIP	400 mV	0.3 in
ON Semiconductor CNY17F1M	1	DC	40 %	100 °C	-40 °C	70 V	6-DIP		7.62 mm	4 µs	3.5 µs	1.35 V	80 %	50 mA	2 µs 3 µs	60 mA	1.81 mOhm	Through Hole	4170 Vrms	6-DIP	400 mV	0.3 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 0.72
		10	$ 0.43
		100	$ 0.29
		500	$ 0.23
		1000	$ 0.21
		2000	$ 0.20
		5000	$ 0.18
		10000	$ 0.18
Newark	Each	1000	$ 0.24
		2500	$ 0.20
		10000	$ 0.19
ON Semiconductor	N/A	1	$ 0.20

Description

General part information

CNY17F1M Series

The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Documents

Technical documentation and resources

Datasheet

Product Change Notice EN

Datasheet

Package Drawing-646BX-PDIP6 8.51x6.35, 2.54P

Package Drawing