Discrete Semiconductor Products

FDY300NZ

Obsolete

N-CHANNEL 2.5V SPECIFIED POWERTRENCH® MOSFET 20V, 0.6A, 0.7Ω

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Discrete Semiconductor Products

Obsolete

N-CHANNEL 2.5V SPECIFIED POWERTRENCH® MOSFET 20V, 0.6A, 0.7Ω

Technical Specifications

Parameters and characteristics for this part

Specification	FDY300NZ

Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	60 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-89, SOT-490
Power Dissipation (Max) [Max]	625 mW
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	SC-89-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.3 V

N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 0.6A, 0.7Ω

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDY300NZ	MOSFET (Metal Oxide)	-55 °C	150 °C	SC-89-3	625 mW	12 V	700 mOhm	N-Channel	SC-89 SOT-490	60 pF	1.3 V	Surface Mount	1.1 nC	20 V	1.8 V 4.5 V	600 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(ON)@ VGS= 2.5V.

Technical documentation and resources