Discrete Semiconductor Products

SI4124DY-T1-E3

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MOSFET N-CH 40V 20.5A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 40V 20.5A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4124DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	20.5 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	77 nC
Input Capacitance (Ciss) (Max) @ Vds	3540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W, 5.7 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI4124DY-T1-E3	40 V	MOSFET (Metal Oxide)	3540 pF	2.5 W 5.7 W	3 V	7.5 mOhm	20 V	4.5 V 10 V	Surface Mount	20.5 A	N-Channel	-55 °C	150 °C	77 nC	8-SOIC	3.9 mm	0.154 in	8-SOIC

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General part information

N-Channel 40 V 20.5A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

Technical documentation and resources