Discrete Semiconductor Products

SIHH125N60EF-T1GE3

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MOSFET N-CH 600V 23A PPAK 8 X 8

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Discrete Semiconductor Products

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MOSFET N-CH 600V 23A PPAK 8 X 8

Technical Specifications

Parameters and characteristics for this part

Specification	SIHH125N60EF-T1GE3

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1533 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	PowerPAK® 8 x 8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Mounting Type	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SIHH125N60EF-T1GE3	10 V	5 V	8-PowerTDFN	1533 pF	MOSFET (Metal Oxide)	23 A	125 mOhm	600 V	PowerPAK® 8 x 8	-55 °C	150 °C	30 V	N-Channel	Surface Mount	156 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 23A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8

Technical documentation and resources