
Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BA12004BF-E2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 4.4 mm, 0.173 " |
| Package / Case | 16-SOIC |
| Power - Max [Max] | 620 mW |
| Supplier Device Package | 16-SOP |
| Vce Saturation (Max) @ Ib, Ic | 1.6 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
BA12004 Series
Bipolar (BJT) Transistor Array 7 NPN Darlington 60V 500mA 620mW Surface Mount 16-SOP
Documents
Technical documentation and resources