
Discrete Semiconductor Products
SI5980DU-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET 2N-CH 100V 2.5A CHIPFET
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Discrete Semiconductor Products
SI5980DU-T1-GE3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET 2N-CH 100V 2.5A CHIPFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SI5980DU-T1-GE3 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 3.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 78 pF |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Power - Max [Max] | 7.8 W |
| Rds On (Max) @ Id, Vgs | 567 mOhm |
| Supplier Device Package | PowerPAK® ChipFet Dual |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SI5980 Series
Mosfet Array 100V 2.5A 7.8W Surface Mount PowerPAK® ChipFet Dual
Documents
Technical documentation and resources
No documents available