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LITTELFUSE LJ6008D8TP

Discrete Semiconductor Products

R6511KND3TL1

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Rohm Semiconductor

HIGH-SPEED SWITCHING, NCH 650V 11A, TO-252 (DPAK), POWER MOSFET

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN What Is Thermal Design +29

LITTELFUSE LJ6008D8TP

Discrete Semiconductor Products

R6511KND3TL1

Active

Rohm Semiconductor

HIGH-SPEED SWITCHING, NCH 650V 11A, TO-252 (DPAK), POWER MOSFET

Deep-Dive with AI

DocumentsTechnical Data Sheet EN What Is Thermal Design +29

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6511KND3TL1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	124 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.14
		10	$ 1.39
		100	$ 0.96
		500	$ 0.93
	Digi-Reel®	1	$ 2.14
		10	$ 1.39
		100	$ 0.96
		500	$ 0.93
	Tape & Reel (TR)	2500	$ 0.93
Newark	Each (Supplied on Cut Tape)	1	$ 2.98
		10	$ 1.97
		25	$ 1.77
		50	$ 1.57
		100	$ 1.37
		250	$ 1.25
		500	$ 1.12
		1000	$ 1.04

Description

General part information

R6511KND3 Series

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Documents

Technical documentation and resources

Technical Data Sheet EN

What Is Thermal Design

Measurement Method and Usage of Thermal Resistance RthJC

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Moisture Sensitivity Level - Transistors

Package Information

θ<sub>JA</sub> and Ψ<sub>JT</sub>

PCB Layout Thermal Design Guide

Types and Features of Transistors

Application Note

Judgment Criteria of Thermal Evaluation

Explanation for Marking

Package Information

Reliability Test Result

Manufacturing Data

Method for Monitoring Switching Waveform

Schematic Design & Verification

Report of SVHC under REACH Regulation

Environmental Data

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

About Export Regulations

Export Information

Part Explanation

Application Note

What is a Thermal Model? (Transistor)

Package Dimensions

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

List of Transistor Package Thermal Resistance

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

About Flammability of Materials

Environmental Data

R6511KND3 ESD Data

Characteristics Data

Notes for Temperature Measurement Using Thermocouples

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

R6511KND3 Series

High-speed Switching, Nch 650V 11A, TO-252 (DPAK), Power MOSFET

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor R6511KND3TL1	MOSFET (Metal Oxide)	11 A	124 W	10 V	22 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	N-Channel	TO-252	5 V	650 V	20 V	400 mOhm	150 °C
Rohm Semiconductor R6511END3TL1	MOSFET (Metal Oxide)	11 A	124 W	10 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	N-Channel	TO-252	4 V	650 V	20 V	400 mOhm	150 °C	32 nC	670 pF