IXFT20N100P
ActiveDISCMOSFETN-CH HIPERFET-POLAR TO-268AA
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IXFT20N100P
ActiveDISCMOSFETN-CH HIPERFET-POLAR TO-268AA
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXFT20N100P |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D3PAK (2 Leads + Tab), TO-268AA, TO-268-3 |
| Power Dissipation (Max) [Max] | 660 W |
| Rds On (Max) @ Id, Vgs [Max] | 570 mOhm |
| Supplier Device Package | TO-268AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 6.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 300 | $ 10.49 | |
Description
General part information
IXFT20N100P Series
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on), low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings
Documents
Technical documentation and resources