Beta

⌘K

RQ3E150GNTB

Discrete Semiconductor Products

RQ3E150GNTB

Active

Rohm Semiconductor

MOSFET, N-CH, 30V, 39A, HSMT-8

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Basics of Thermal Resistance and Heat Dissipation +35

RQ3E150GNTB

Discrete Semiconductor Products

RQ3E150GNTB

Active

Rohm Semiconductor

MOSFET, N-CH, 30V, 39A, HSMT-8

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Basics of Thermal Resistance and Heat Dissipation +35

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RQ3E150GNTB

Current - Continuous Drain (Id) @ 25°C	15 A, 39 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	850 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	17 W, 2 W
Rds On (Max) @ Id, Vgs	6.1 mOhm
Supplier Device Package [custom]	8-HSMT
Supplier Device Package [x]	3.2
Supplier Device Package [y]	3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	17504	$ 0.74
Newark	Each (Supplied on Cut Tape)	1	$ 0.79
		10	$ 0.55
		25	$ 0.49
		50	$ 0.43
		100	$ 0.37
		300	$ 0.33
		500	$ 0.28
		1000	$ 0.25

Description

General part information

RQ3E150GN Series

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Documents

Technical documentation and resources

Technical Data Sheet EN

Basics of Thermal Resistance and Heat Dissipation

HSMT8 Single Cu Inner Structure

Package Information

What Is Thermal Design

List of Transistor Package Thermal Resistance

About Export Regulations

Export Information

PCB Layout Thermal Design Guide

Explanation for Marking

Package Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Compliance of the RoHS directive

Environmental Data

Anti-Whisker formation - Transistors

Package Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Method for Monitoring Switching Waveform

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

ESD Data

Characteristics Data

About Flammability of Materials

Environmental Data

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Types and Features of Transistors

Application Note

Package Dimensions

Package Information

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Moisture Sensitivity Level - Transistors

Package Information

Part Explanation

Application Note

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Taping Information

Package Information

What is a Thermal Model? (Transistor)

How to Use LTspice® Models

Schematic Design & Verification

How to Create Symbols for PSpice Models

Condition of Soldering / Land Pattern Reference

Package Information

Notes for Temperature Measurement Using Thermocouples

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Notes for Calculating Power Consumption:Static Operation

Precautions When Measuring the Rear of the Package with a Thermocouple

RQ3E150GN Series

4.5V Drive Nch MOSFET

Part	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package [x]	Supplier Device Package [custom]	Supplier Device Package [y]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature	Drain to Source Voltage (Vdss)	Technology
Rohm Semiconductor RQ3E150GNTB	2.5 V	8-PowerVDFN	3.2	8-HSMT	3	850 pF	20 V	Surface Mount	6.1 mOhm	15 A 39 A	2 W 17 W	4.5 V 10 V	15.3 nC	N-Channel	150 °C	30 V	MOSFET (Metal Oxide)