Discrete Semiconductor Products
RGT8TM65DGC9
NRNDRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 4A, FRD BUILT-IN, TO-220NFM, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGT8TM65DGC9
NRNDRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 4A, FRD BUILT-IN, TO-220NFM, FIELD STOP TRENCH IGBT
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Technical Specifications
Parameters and characteristics for this part
| Specification | RGT8TM65DGC9 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 5 A |
| Current - Collector Pulsed (Icm) | 12 A |
| Gate Charge | 13.5 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-220-3 Full Pack |
| Power - Max [Max] | 16 W |
| Reverse Recovery Time (trr) | 40 ns |
| Supplier Device Package | TO-220NFM |
| Td (on/off) @ 25°C [custom] | 69 ns |
| Td (on/off) @ 25°C [custom] | 17 ns |
| Test Condition | 50 Ohm, 4 A, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGT8TM65D Series
RGT8TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Documents
Technical documentation and resources