
Discrete Semiconductor Products
DMTH6016LSDQ-13
ActiveDiodes Inc
TRANS MOSFET N-CH 60V 7.6A AUTOMOTIVE AEC-Q101 8-PIN SO T/R
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Discrete Semiconductor Products
DMTH6016LSDQ-13
ActiveDiodes Inc
TRANS MOSFET N-CH 60V 7.6A AUTOMOTIVE AEC-Q101 8-PIN SO T/R
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Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH6016LSDQ-13 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 7.6 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 864 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 1.9 W |
| Power - Max [Min] | 1.4 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 19.5 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
DMTH6016LFDFWQ Series
60V 175°C Dual N-Channel Enhancement Mode MOSFET
| Part | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Grade | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Qualification | Supplier Device Package | Vgs(th) (Max) @ Id | Configuration | Technology | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Power - Max [Max] | Power - Max [Min] | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 19 mOhm | 864 pF | Automotive | 8-PowerTDFN | 9.2 A 33.2 A | 60 V | 17 nC | AEC-Q101 | PowerDI5060-8 | 2.5 V | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 175 ░C | 2.5 W 37.5 W | ||||||||||
Diodes Inc | 864 pF | Automotive | 8-PowerTDFN | 9.8 A 37 A | 60 V | 17 nC | AEC-Q101 | PowerDI5060-8 | 2.5 V | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 175 ░C | N-Channel | 4.5 V 10 V | 20 V | 2.6 W 37.5 W | 16 mOhm | ||||||||
Diodes Inc | 939 pF | Automotive | 8-PowerVDFN | 41 A | 60 V | 15.1 nC | AEC-Q101 | PowerDI3333-8 (SWP) Type UX | 2.5 V | MOSFET (Metal Oxide) | Surface Mount Wettable Flank | -55 °C | 175 ░C | N-Channel | 4.5 V 10 V | 20 V | 1.2 W | 16 mOhm | ||||||||
Diodes Inc | 925 pF | Automotive | 6-UDFN Exposed Pad | 9.4 A | 60 V | 15.3 nC | AEC-Q101 | U-DFN2020-6 (SWP) (Type F) | 3 V | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 175 ░C | N-Channel | 4.5 V 10 V | 20 V | 1.06 W | 18 mOhm | ||||||||
Diodes Inc | 864 pF | Automotive | 8-PowerTDFN | 10.6 A 37.1 A | 60 V | 17 nC | AEC-Q101 | PowerDI5060-8 | 2.5 V | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 175 ░C | N-Channel | 4.5 V 10 V | 20 V | 16 mOhm | 3 W 37.5 W | ||||||||
Diodes Inc | 19.5 mOhm | 864 pF | Automotive | 8-SOIC | 7.6 A | 60 V | 17 nC | AEC-Q101 | 8-SO | 2.5 V | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 175 ░C | 1.9 W | 1.4 W | 3.9 mm | 0.154 in | |||||||
Diodes Inc | 925 pF | 6-UDFN Exposed Pad | 9.4 A | 60 V | 15.3 nC | U-DFN2020-6 (SWP) (Type F) | 3 V | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 175 ░C | N-Channel | 4.5 V 10 V | 20 V | 1.06 W | 18 mOhm | ||||||||||
Diodes Inc | 19.5 mOhm | 864 pF | Automotive | 8-SOIC | 7.6 A | 17 nC | AEC-Q101 | 8-SOIC | 2.5 V | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | 3.9 mm | 0.154 in | ||||||||||
Diodes Inc | 939 pF | Automotive | 8-PowerVDFN | 41 A | 60 V | 15.1 nC | AEC-Q101 | PowerDI3333-8 (SWP) Type UX | 2.5 V | MOSFET (Metal Oxide) | Surface Mount Wettable Flank | -55 °C | 175 ░C | N-Channel | 4.5 V 10 V | 20 V | 1.2 W | 16 mOhm | ||||||||
Diodes Inc | 939 pF | Automotive | 8-PowerVDFN | 41 A | 60 V | 15.1 nC | AEC-Q101 | PowerDI3333-8 (SWP) Type UX | 2.5 V | MOSFET (Metal Oxide) | Surface Mount Wettable Flank | -55 °C | 175 ░C | N-Channel | 4.5 V 10 V | 20 V | 1.17 W | 16 mOhm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMTH6016LFDFWQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.
Documents
Technical documentation and resources