Discrete Semiconductor Products

AUIRGP4062D

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AUIRGP4062D - AUTOMOTIVE IGBT DI

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Discrete Semiconductor Products

Active

AUIRGP4062D - AUTOMOTIVE IGBT DI

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRGP4062D

Gate Charge	50 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Reverse Recovery Time (trr)	89 ns
Supplier Device Package	TO-247AC
Switching Energy	115 µJ, 600 µJ
Td (on/off) @ 25°C	104 ns, 41 ns
Test Condition	15 V, 400 V, 10 Ohm, 24 A
Vce(on) (Max) @ Vge, Ic	1.95 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	IGBT Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Supplier Device Package	Mounting Type	Switching Energy	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Test Condition	Package / Case
Infineon Technologies AUIRGP4062D1	55 A	217 W	Trench	90 ns	19 ns	TO-247AC	Through Hole	311 µJ 532 µJ	-55 °C	175 ░C	77 nC	1.77 V	600 V	102 ns	10 Ohm 15 V 24 A 400 V	TO-247-3
Infineon Technologies AUIRGP4062D		250 W			41 ns 104 ns	TO-247AC	Through Hole	115 µJ 600 µJ	-55 °C	175 ░C	50 nC	1.95 V	600 V	89 ns	10 Ohm 15 V 24 A 400 V	TO-247-3
Infineon Technologies AUIRGP4062D		250 W			41 ns 104 ns	TO-247AC	Through Hole	115 µJ 600 µJ	-55 °C	175 ░C	50 nC	1.95 V	600 V	89 ns	10 Ohm 15 V 24 A 400 V	TO-247-3
Infineon Technologies AUIRGP4062D-E		250 W			41 ns 104 ns	PG-TO247AD	Through Hole	115 µJ 600 µJ	-55 °C	175 ░C	50 nC	1.95 V	600 V	89 ns	10 Ohm 15 V 24 A 400 V	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 600 V 48 A 250 W Through Hole TO-247AC

Technical documentation and resources

No documents available