Specification	NTLUD3A50PZTAG

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10.4 nC
Input Capacitance (Ciss) (Max) @ Vds	920 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	50 mOhm
Supplier Device Package	6-UDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

NTLUD3A260P Series

Dual P-Channel µCool™ Power MOSFET -20V -1.7A 200mΩ

Part	Configuration	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25C	Technology	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTLUD3A260PZTAG	2 P-Channel	500 mW	4.2 nC	6-UDFN (1.6x1.6)	20 V	Logic Level Gate	300 pF	200 mOhm	Surface Mount	150 °C	-55 °C	1.3 A	MOSFET (Metal Oxide)	1 V	6-UFDFN Exposed Pad
ON Semiconductor NTLUD3A50PZTAG	2 P-Channel	500 mW	10.4 nC	6-UDFN (2x2)	20 V	Logic Level Gate		50 mOhm	Surface Mount	150 °C	-55 °C		MOSFET (Metal Oxide)	1 V	6-UDFN Exposed Pad	920 pF	2.8 A
ON Semiconductor NTLUD3A260PZTBG	2 P-Channel	500 mW	4.2 nC	6-UDFN (1.6x1.6)	20 V	Logic Level Gate	300 pF	200 mOhm	Surface Mount	150 °C	-55 °C		MOSFET (Metal Oxide)	1 V	6-UFDFN Exposed Pad		1.3 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET−20 V, −2.1 A, µCool™ Dual P−Channel,ESD, 1.6x1.6x0.55 mm UDFN Package