Discrete Semiconductor Products

BD437TG

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 45 V, 4 A, 36 W, TO-225, THROUGH HOLE

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 45 V, 4 A, 36 W, TO-225, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	BD437TG

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	85
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	36 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

Medium Power NPN Bipolar Power Transistor

Part	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Transistor Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic [Max]	Operating Temperature
ON Semiconductor BD437G	3 MHz	85	800 mV	4 A	TO-126-3 TO-225AA	Through Hole	45 V	100 µA	NPN	36 W	-55 °C	150 °C	TO-126
ON Semiconductor BD437TG	3 MHz	85	800 mV	4 A	TO-126-3 TO-225AA	Through Hole	45 V	100 µA	NPN	36 W	-55 °C	150 °C	TO-126
ON Semiconductor BD437S	3 MHz	30		4 A	TO-126-3 TO-225AA	Through Hole	45 V	100 µA	NPN	36 W			TO-126-3	600 mV	150 °C
ON Semiconductor BD437	3 MHz	85	800 mV	4 A	TO-126-3 TO-225AA	Through Hole	45 V	100 µA	NPN	36 W	-55 °C	150 °C	TO-126

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This series of plastic, medium-power NPN transistors can be used for amplifier and switching applications.Replacement Active Part Number:BD437