Specification	CSD16413Q5A

Current - Continuous Drain (Id) @ 25°C	100 A, 24 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11.7 nC
Input Capacitance (Ciss) (Max) @ Vds	1780 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id	1.9 V

CSD16413Q5A Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.6 mOhm

Part	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
Texas Instruments CSD16413Q5A	25 V	MOSFET (Metal Oxide)	3.9 mOhm	24 A 100 A	-12 V 16 V	8-VSONP (5x6)	1.9 V	8-PowerTDFN	3.1 W	N-Channel	Surface Mount	-55 °C	150 °C	1780 pF	11.7 nC	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Technical documentation and resources