BUK7M19-60EX

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MOSFET N-CH 60V 35.8A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 60V 35.8A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7M19-60EX

Current - Continuous Drain (Id) @ 25°C	35.8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1055 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	55 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	19 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Rds On (Max) @ Id, Vgs [Max]	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Grade	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP BUK7M19-60EX	20 V	1055 pF	-55 °C	175 ░C	N-Channel	MOSFET (Metal Oxide)	19 mOhm	AEC-Q101	17.3 nC	55 W	Automotive	LFPAK33	35.8 A	Surface Mount	10 V	60 V

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General part information

N-Channel 60 V 35.8A (Tc) 55W (Tc) Surface Mount LFPAK33

Technical documentation and resources