Specification	FJPF13009H2TU

Current - Collector (Ic) (Max) [Max]	12 A
DC Current Gain (hFE) (Min) @ Ic, Vce	8 hFE
Frequency - Transition	4 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	50 W
Supplier Device Package	TO-220F-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	400 V

FJPF13009 Series

NPN Silicon Transistor

Part	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Package / Case	Power - Max [Max]	Transistor Type
ON Semiconductor FJPF13009H2TU	Through Hole	4 MHz	12 A	150 °C	8 hFE	400 V	3 V	TO-220F-3	TO-220-3 Full Pack	50 W	NPN
ON Semiconductor FJPF13009H1TU	Through Hole	4 MHz	12 A	150 °C		400 V	3 V	TO-220F-3	TO-220-3 Full Pack Formed Leads	50 W	NPN
ON Semiconductor FJPF13009H1TU	Through Hole	4 MHz	12 A	150 °C		400 V	3 V	TO-220F-3	TO-220-3 Full Pack Formed Leads	50 W	NPN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FJPF13009 Series

The FJPF13009 is a 700 V 12 A NPN Silicon Epitaxial Planar Transistor. The FJPF13009 is available with multiple hFEbin classes for ease of design use. The FJPF13009 is designed for high speed switching applications which utilizes the industry standard TO-220F package offering flexibility in design and excellent Power Dissipation.