Discrete Semiconductor Products

SUP60020E-GE3

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TRANS MOSFET N-CH 80V 150A 3-PIN(3+TAB) TO-220AB

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 80V 150A 3-PIN(3+TAB) TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP60020E-GE3

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	227 nC
Input Capacitance (Ciss) (Max) @ Vds	10680 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Supplier Device Package	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SUP60020E-GE3	TO-220-3	TO-220AB	375 W	-55 °C	175 ░C	2.4 mOhm	Through Hole	150 A	MOSFET (Metal Oxide)	10680 pF	20 V	N-Channel	227 nC	10 V	7.5 V	80 V	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 150A (Tc) 375W (Tc) Through Hole TO-220AB

Technical documentation and resources