Discrete Semiconductor Products

MCAC88N12A-TP

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N-CHANNEL MOSFET, DFN5060

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Discrete Semiconductor Products

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N-CHANNEL MOSFET, DFN5060

Technical Specifications

Parameters and characteristics for this part

Specification	MCAC88N12A-TP

Current - Continuous Drain (Id) @ 25°C	88 A
Drain to Source Voltage (Vdss)	120 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	71 nC
Input Capacitance (Ciss) (Max) @ Vds	4249 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	120 W
Rds On (Max) @ Id, Vgs [Max]	7.2 mOhm
Supplier Device Package	DFN5060
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)
Micro Commercial Components MCAC88N12A-TP	4249 pF	8-PowerTDFN	3 V	N-Channel	DFN5060	7.2 mOhm	120 W	-55 °C	150 °C	71 nC	Surface Mount	88 A	120 V	MOSFET (Metal Oxide)	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 120 V 88A 120W Surface Mount DFN5060

Technical documentation and resources

No documents available