Specification	KSB772YS

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1 W
Supplier Device Package	TO-126-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

KSB772 Series

PNP Epitaxial Silicon Transistor

Part	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]
ON Semiconductor KSB772YSTU	1 W	TO-126-3 TO-225AA	1 µA	PNP	160	150 °C	500 mV	30 V	TO-126-3	Through Hole	3 A
ON Semiconductor KSB772YS	1 W	TO-126-3 TO-225AA	1 µA	PNP	160	150 °C	500 mV	30 V	TO-126-3	Through Hole	3 A
ON Semiconductor KSB772YS	1 W	TO-126-3 TO-225AA	1 µA	PNP	160	150 °C	500 mV	30 V	TO-126-3	Through Hole	3 A
ON Semiconductor KSB772YSTU	1 W	TO-126-3 TO-225AA	1 µA	PNP	160	150 °C	500 mV	30 V	TO-126-3	Through Hole	3 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources