Specification	FCP150N65F

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3737 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	298 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

FCP150N65F Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650V, 24A, 150mΩ, TO-220

Part	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FCP150N65F	150 mOhm	TO-220-3	298 W	Through Hole	10 V	20 V	93 nC	N-Channel	-55 °C	150 °C	TO-220-3	24 A	650 V	5 V	MOSFET (Metal Oxide)	3737 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.03
		10	$ 4.05
		100	$ 2.92
		500	$ 2.44
		1000	$ 2.43
Newark	Each	500	$ 3.23
		1000	$ 2.73
		2500	$ 2.59
		10000	$ 2.44
ON Semiconductor	N/A	1	$ 2.24

Description

General part information

FCP150N65F Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.