Specification	NTMJS0D9N03CGTWG

Current - Continuous Drain (Id) @ 25°C	315 A, 50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	131.4 nC
Input Capacitance (Ciss) (Max) @ Vds	9550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	150 W, 3.9 W
Rds On (Max) @ Id, Vgs [Max]	0.9 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

NTMJS0D9N03CG Series

MOSFET 30V N Channel LFPAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Supplier Device Package
ON Semiconductor NTMJS0D9N03CGTWG	131.4 nC	50 A 315 A	2.2 V	MOSFET (Metal Oxide)	9550 pF	N-Channel	10 V	0.9 mOhm	30 V	3.9 W 150 W	8-LFPAK56 SOT-1205	-55 °C	175 ░C	Surface Mount	20 V	8-LFPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFET, Power N Channel 30V/±20V, 0.65mΩ, 410A, 188W, LFPAK 5x6mm

Technical documentation and resources