Discrete Semiconductor Products

PMEG2015EPK,315

Active

DIODE SCHOTT 20V 1.5A DFN1608D-2

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE SCHOTT 20V 1.5A DFN1608D-2

Technical Specifications

Parameters and characteristics for this part

Specification	PMEG2015EPK,315

Capacitance @ Vr, F	120 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	350 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	2-XDFN
Qualification	AEC-Q101
Reverse Recovery Time (trr)	5 ns
Speed	200 mA, 500 ns
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	420 mV

Part	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Qualification	Current - Average Rectified (Io)	Operating Temperature - Junction	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Freescale Semiconductor - NXP PMEG2015EH,115	50 pF	SOD-123F	70 µA	200 mA 500 ns	SOD-123F	Schottky	20 V	Automotive	AEC-Q101	1.5 A	150 °C	Surface Mount	660 mV
Freescale Semiconductor - NXP PMEG2015EJ,115	50 pF	SOD-323F	70 µA	200 mA 500 ns	SC-90 SOD-323F	Schottky	20 V	Automotive	AEC-Q101	1.5 A	150 °C	Surface Mount	660 mV
Freescale Semiconductor - NXP PMEG2015EPK,315	120 pF		350 µA	200 mA 500 ns	2-XDFN	Schottky	20 V	Automotive	AEC-Q101	1.5 A	150 °C	Surface Mount	420 mV	5 ns
Freescale Semiconductor - NXP PMEG2015EA,115	25 pF	SOD-323	50 µA	200 mA 500 ns	SC-76 SOD-323	Schottky	20 V	Automotive	AEC-Q101	1.5 A		Surface Mount	660 mV		125 °C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 20 V 1.5A Surface Mount DFN1608D-2

Technical documentation and resources