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8-TDFN
Discrete Semiconductor Products

NTMTS4D3N15MC

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ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 150V, 174A, 4.45MΩ, PQFN 8X8

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8-TDFN
Discrete Semiconductor Products

NTMTS4D3N15MC

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 150V, 174A, 4.45MΩ, PQFN 8X8

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMTS4D3N15MC
Current - Continuous Drain (Id) @ 25°C22 A, 174 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs79 nC
Input Capacitance (Ciss) (Max) @ Vds6514 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)293 W, 5 W
Rds On (Max) @ Id, Vgs [Max]4.45 mOhm
Supplier Device Package8-DFNW
Supplier Device Package [x]8.3
Supplier Device Package [y]8.4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.91
10$ 5.38
100$ 3.95
500$ 3.48
Digi-Reel® 1$ 7.91
10$ 5.38
100$ 3.95
500$ 3.48
Tape & Reel (TR) 3000$ 3.48
NewarkEach (Supplied on Cut Tape) 1$ 7.66
10$ 5.24
25$ 4.79
50$ 4.36
100$ 3.92
250$ 3.78
500$ 3.63
ON SemiconductorN/A 1$ 3.21

Description

General part information

NTMTS4D3N15MC Series

This N-Channel PTNG 150V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.