KSC5200OTU

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POWER BIPOLAR TRANSISTOR NPN

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Discrete Semiconductor Products

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POWER BIPOLAR TRANSISTOR NPN

Technical Specifications

Parameters and characteristics for this part

Specification	KSC5200OTU

DC Current Gain (hFE) (Min) @ Ic, Vce	80
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	130 W
Supplier Device Package	HPM F2
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	230 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Supplier Device Package	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Mounting Type	Power - Max [Max]
ON Semiconductor KSC5200OTU	80	NPN	3 V	150 °C	HPM F2	30 MHz	230 V	TO-264-3 TO-264AA	Through Hole	130 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	567	$ 0.53

General part information

Bipolar (BJT) Transistor NPN 230 V 13 A 30MHz 130 W Through Hole HPM F2

Technical documentation and resources

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