Specification	SGS23N60UFDTU

Current - Collector (Ic) (Max)	23 A
Current - Collector Pulsed (Icm)	92 A
Gate Charge	49 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	73 W
Reverse Recovery Time (trr)	60 ns
Supplier Device Package	TO-220F-3
Switching Energy [custom]	115 µJ
Switching Energy [custom]	135 µJ
Td (on/off) @ 25°C	60 ns
Td (on/off) @ 25°C	17 ns
Test Condition	23 Ohm, 15 V, 300 V, 12 A
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

SGS23N60UFD Series

600V, PT IGBT

Part	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Gate Charge	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Switching Energy [custom]	Switching Energy [custom]	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Collector (Ic) (Max)
ON Semiconductor SGS23N60UFDTU	12 A 15 V 23 Ohm 300 V	60 ns	17 ns	49 nC	2.6 V	73 W	600 V	Through Hole	60 ns	TO-220-3 Full Pack	115 µJ	135 µJ	92 A	-55 °C	150 °C	TO-220F-3	23 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SGS23N60UFD Series

ON Semiconductor's UFD series of insulated gate bipolar transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.