Discrete Semiconductor Products

SI7882DP-T1-GE3

Obsolete

MOSFET N-CH 12V 13A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 12V 13A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7882DP-T1-GE3

Current - Continuous Drain (Id) (Ta)	13 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	5.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1.4 V

Part	Package / Case	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Gate Charge (Max)	Rds On (Max)	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Package Name	Vgs (Max)
Vishay Dale SI7882DP-T1-GE3	PowerPAK® SO-8	1.9 W	-55 °C	150 °C	MOSFET (Metal Oxide)	30 nC	5.5 mOhm	N-Channel	2.5 V	4.5 V	Surface Mount	1.4 V	12 V	13 A	PowerPAK® SO-8	8 V
Vishay Dale SI7882DP-T1-E3	PowerPAK® SO-8	1.9 W	-55 °C	150 °C	MOSFET (Metal Oxide)	30 nC	5.5 mOhm	N-Channel	2.5 V	4.5 V	Surface Mount	1.4 V	12 V	13 A	PowerPAK® SO-8	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 12 V 13A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources