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8-TDFN 3x3
Integrated Circuits (ICs)

ISL89163FRTAZ

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Renesas Electronics Corporation

HIGH SPEED, DUAL CHANNEL, 6A, POWER MOSFET DRIVER WITH ENABLE INPUTS

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8-TDFN 3x3
Integrated Circuits (ICs)

ISL89163FRTAZ

Active
Renesas Electronics Corporation

HIGH SPEED, DUAL CHANNEL, 6A, POWER MOSFET DRIVER WITH ENABLE INPUTS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationISL89163FRTAZ
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]6 A
Current - Peak Output (Source, Sink) [custom]6 A
Driven ConfigurationLow-Side
Gate TypeN-Channel MOSFET
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case8-WDFN Exposed Pad
Rise / Fall Time (Typ) [custom]20 ns
Rise / Fall Time (Typ) [custom]20 ns
Supplier Device Package8-TDFN (3x3)
Voltage - Supply [Max]16 V
Voltage - Supply [Min]4.5 V

ISL89163 Series

High Speed, Dual Channel, 6A, Power MOSFET Driver with Enable Inputs

PartPackage / CaseOperating Temperature [Min]Operating Temperature [Max]Logic Voltage - VIL, VIHNumber of DriversDriven ConfigurationSupplier Device PackageInput TypeRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Mounting TypeChannel TypeGate TypeVoltage - Supply [Min]Voltage - Supply [Max]Current - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Package / CasePackage / Case
8-TDFN 3x3
Renesas Electronics Corporation
8-WDFN Exposed Pad
-40 °C
125 ¯C
1.85 V
3.15 V
2
Low-Side
8-TDFN (3x3)
Non-Inverting
20 ns
20 ns
Surface Mount
Independent
N-Channel MOSFET
4.5 V
16 V
6 A
6 A
8-TDFN 3x3
Renesas Electronics Corporation
8-WDFN Exposed Pad
-40 °C
125 ¯C
2
Low-Side
8-TDFN (3x3)
Non-Inverting
20 ns
20 ns
Surface Mount
Independent
N-Channel MOSFET
4.5 V
16 V
6 A
6 A
8-SOIC-EP
Renesas Electronics Corporation
8-SOIC
-40 °C
125 ¯C
2.4 V
9.6 V
2
Low-Side
8-SOIC-EP
Non-Inverting
20 ns
20 ns
Surface Mount
Independent
N-Channel MOSFET
7.5 V
16 V
6 A
6 A
0.154 in
3.9 mm
Product Image
Renesas Electronics Corporation
8-WDFN Exposed Pad
-40 °C
125 ¯C
2
Low-Side
8-TDFN (3x3)
Non-Inverting
20 ns
20 ns
Surface Mount
Independent
MOSFET (N-Channel)
4.5 V
16 V
6 A
6 A
ISL8916x Functional Diagram
Renesas Electronics Corporation
8-SOIC
-40 °C
125 ¯C
2
Low-Side
8-SOIC-EP
Non-Inverting
20 ns
20 ns
Surface Mount
Independent
MOSFET (N-Channel)
4.5 V
16 V
6 A
6 A
0.154 in
3.9 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1000$ 2.37

Description

General part information

ISL89163 Series

The ISL89163, ISL89164, and ISL89165 are high-speed, 6A, dual channel MOSFET drivers with enable inputs. Precision thresholds on all logic inputs allow the use of external RC circuits to generate accurate and stable time delays on both the main channel inputs, INA and INB, and the enable inputs, ENA and ENB. The precision delays capable of these precise logic thresholds makes these parts very useful for dead-time control and synchronous rectifiers. Note that the enable and input logic inputs can be interchanged for alternate logic implementations. Three input logic thresholds are available: 3. 3V (CMOS), 5. 0V (CMOS or TTL compatible), and CMOS thresholds that are proportional to VDD. At high switching frequencies, these MOSFET drivers use very little internal bias currents. Separate, non-overlapping drive circuits are used to drive each CMOS output FET to prevent shoot-through currents in the output stage. The start-up sequence is designed to prevent unexpected glitches when VDDis being turned on or turned off. When VDD~1V, an internal 10kΩ resistor between the output and ground helps to keep the output voltage low. When ~1V VDDUV, both outputs are driven low with very low resistance and the logic inputs are ignored. This insures that the driven FETs are off. When VDD> UVLO, and after a short delay, the outputs now respond to the logic inputs.

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