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IMT2AT108
Discrete Semiconductor Products

IMX8T108

NRND
Rohm Semiconductor

TRANS GP BJT NPN 120V 0.05A 6-PIN SMT T/R

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IMT2AT108
Discrete Semiconductor Products

IMX8T108

NRND
Rohm Semiconductor

TRANS GP BJT NPN 120V 0.05A 6-PIN SMT T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIMX8T108
Current - Collector (Ic) (Max) [Max]50 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce180 hFE
Frequency - Transition140 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-74, SOT-457
Power - Max [Max]300 mW
Supplier Device PackageSMT6
Transistor Type2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.52
10$ 0.32
100$ 0.20
500$ 0.15
1000$ 0.14
Digi-Reel® 1$ 0.52
10$ 0.32
100$ 0.20
500$ 0.15
1000$ 0.14
Tape & Reel (TR) 3000$ 0.12
6000$ 0.11
9000$ 0.10
15000$ 0.09
21000$ 0.09
30000$ 0.09
75000$ 0.08

Description

General part information

IMX8 Series

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.· Ultra-compact complex bipolar transistor· For pre-amplifier· Small Surface Mount Package· Pb Free/RoHS Compliant

Documents

Technical documentation and resources

No documents available