Discrete Semiconductor Products

SBE808-TL-W

Obsolete

1.0 A, 15 V, SCHOTTKY BARRIER DIODE, LOW IR, NON-MONOLITHIC DUAL MCPH5

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Discrete Semiconductor Products

Obsolete

1.0 A, 15 V, SCHOTTKY BARRIER DIODE, LOW IR, NON-MONOLITHIC DUAL MCPH5

Technical Specifications

Parameters and characteristics for this part

Specification	SBE808-TL-W

Current - Average Rectified (Io) (per Diode)	1 A
Current - Reverse Leakage @ Vr	3 µA
Diode Configuration	2 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	6-SMD (5 Leads), Flat Leads
Reverse Recovery Time (trr)	10 ns
Speed	200 mA, 500 ns
Supplier Device Package	5-MCPH
Technology	Schottky
Voltage - Forward (Vf) (Max) @ If	540 mV

1.0 A, 15 V, Schottky Barrier Diode, Low IR, Non-Monolithic Dual MCPH5

Part	Current - Reverse Leakage @ Vr	Speed	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Diode Configuration	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology
ON Semiconductor SBE808-TL-W	3 µA	200 mA 500 ns	1 A	5-MCPH	150 °C	-55 °C	2 Independent	Surface Mount	10 ns	6-SMD (5 Leads) Flat Leads	540 mV	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

SBE808 is Schottky Barrier Diode, 15V, 1A, Low IR, Non-Monolithic Dual MCPH5 for High frequency rectification Applications.