Discrete Semiconductor Products

SIHA155N60EF-GE3

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E SERIES POWER MOSFET THIN-LEAD

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Discrete Semiconductor Products

Active

E SERIES POWER MOSFET THIN-LEAD

Technical Specifications

Parameters and characteristics for this part

Specification	SIHA155N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1465 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	33 W
Rds On (Max) @ Id, Vgs	89 mOhm
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIHA155N60EF-GE3	9 A	20 V	5 V	33 W	1465 pF	TO-220 Full Pack	600 V	38 nC	MOSFET (Metal Oxide)	TO-220-3 Full Pack	N-Channel	10 V	89 mOhm	Through Hole	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 9A (Tc) 33W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources