Discrete Semiconductor Products

SIHK185N60E-T1-GE3

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E SERIES POWER MOSFET POWERPAK 1

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Discrete Semiconductor Products

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E SERIES POWER MOSFET POWERPAK 1

Technical Specifications

Parameters and characteristics for this part

Specification	SIHK185N60E-T1-GE3

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1085 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerBSFN
Power Dissipation (Max) [Max]	114 W
Rds On (Max) @ Id, Vgs	185 mOhm
Supplier Device Package	PowerPAK®10 x 12
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHK185N60E-T1-GE3	-55 °C	150 °C	8-PowerBSFN	114 W	1085 pF	19 A	185 mOhm	600 V	N-Channel	30 V	Surface Mount	PowerPAK®10 x 12	10 V	MOSFET (Metal Oxide)	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 19A (Tc) 114W (Tc) Surface Mount PowerPAK®10 x 12

Technical documentation and resources