Discrete Semiconductor Products

TSC5302DCHC5G

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TRANS NPN 400V 2A TO251

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Discrete Semiconductor Products

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TRANS NPN 400V 2A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	TSC5302DCHC5G

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power - Max [Max]	25 W
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

Part	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Transistor Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package
Taiwan Semiconductor Corporation TSC5302DCP ROG	150 °C	1.5 V	2 A	Surface Mount	NPN	DPAK (2 Leads + Tab) SC-63 TO-252-3	1 µA	TO-252 (DPAK)	25 W	400 V	10
Taiwan Semiconductor Corporation TSC5302DCHC5G	150 °C	1.5 V	2 A	Through Hole	NPN	IPAK TO-251-3 Short Leads TO-251AA	1 µA	TO-251	25 W	400 V	10	IPAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor NPN 400 V 2 A 25 W Through Hole TO-251 (IPAK)

Technical documentation and resources