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4-EDIP
Discrete Semiconductor Products

DF10M

Obsolete
ON Semiconductor

BRIDGE RECT 1PHASE 1KV 1.5A 4DIP

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Search across all available documentation for this part.

4-EDIP
Discrete Semiconductor Products

DF10M

Obsolete
ON Semiconductor

BRIDGE RECT 1PHASE 1KV 1.5A 4DIP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDF10M
Current - Average Rectified (Io)1.5 A
Current - Reverse Leakage @ Vr5 µA
Diode TypeSingle Phase
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case4-EDIP (0.300", 7.62mm)
Supplier Device Package4-DIP
TechnologyStandard
Voltage - Forward (Vf) (Max) @ If1.1 V
Voltage - Peak Reverse (Max) [Max]1000 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 0.47
50$ 0.38
100$ 0.28
500$ 0.22
1000$ 0.18
2000$ 0.16
5000$ 0.15
10000$ 0.14
50000$ 0.14

Description

General part information

DF10S2 Series

With the ever-pressing need to improve power supply efficiency, improve surge rating, improve reliability, and reduce size, the DFxS2 family sets a new standard in performance.The new design offers an improved surge rating of 85 A. This is especially important when striving to improve reliability and increase efficiency. High efficiency designs strive to reduce circuit resistance, which, unfortunately can result in increased inrush surge. As such higher surge current ratings can be required to maintain or improve reliability.The design also offers improved efficiency by achieving a 2 A VF of 1.1 V maximum at 25°C. This lower VF also supports cooler and more efficient operation.Finally, the DFxS2 achieves all this in a SDIP surface mount form factor, reducing board space and volumetric requirements vs. competitive devices.

Documents

Technical documentation and resources