Discrete Semiconductor Products

FDB2570

Obsolete

MOSFET N-CH 150V 22A TO263AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 22A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	FDB2570

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	1911 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	93 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor FDB2570	80 mOhm	150 V	93 W	6 V 10 V	20 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	22 A	4 V	N-Channel	Surface Mount	1911 pF	TO-263 (D2PAK)	56 nC	175 ░C	-65 °C
ON Semiconductor FDB2570	80 mOhm	150 V	93 W	6 V 10 V	20 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	22 A	4 V	N-Channel	Surface Mount	1911 pF	TO-263 (D2PAK)	56 nC	175 ░C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 22A (Ta) 93W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources