Discrete Semiconductor Products

2N2920

Obsolete

TRANS 2NPN 30MA 60V TO78-6

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Discrete Semiconductor Products

Obsolete

TRANS 2NPN 30MA 60V TO78-6

Technical Specifications

Parameters and characteristics for this part

Specification	2N2920

Current - Collector (Ic) (Max) [Max]	30 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300
Frequency - Transition	60 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-78-6 Metal Can
Power - Max [Max]	1.5 W
Supplier Device Package	TO-78-6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Frequency - Transition	Package / Case	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Transistor Type
Central Semiconductor Corp 2N2920	1.5 W	60 V	30 mA	200 °C	-65 °C	300	TO-78-6	60 MHz	TO-78-6 Metal Can	350 mV	Through Hole	2 NPN (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 60MHz 1.5W Through Hole TO-78-6

Technical documentation and resources