Specification	FJP2160DTU

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	5 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	100 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	800 V

FJP2160D Series

ESBC Rated NPN Silicon Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Frequency - Transition	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]
ON Semiconductor FJP2160DTU	800 V	TO-220-3	5 MHz	NPN	750 mV	125 ¯C	-55 °C	TO-220-3	2 A	Through Hole	20	100 W	100 µA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FJP2160D Series

The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBC configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate up to 1600 volts and up to 3amps while providing exceptionally low on-resistance and very low switching losses.The ESBC switch is designed to be easy to drive using off-the-shelf power supply controllers or drivers. The ESBC MOSFET is a low-voltage, low-cost, surface mount device that combines low-input capacitance and fast switching, The ESBC configuration further minimizes the required driving power because it does not have Miller capacitance.The FJP2160D provides exceptional reliability and a large operating range due to its square reverse-bias-safeoperating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors; it is not prone to static dv/dt failures.