Discrete Semiconductor Products

2SK1482-T-AZ

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SILICON N CHANNEL MOSFET

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Discrete Semiconductor Products

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SILICON N CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	2SK1482-T-AZ

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	230 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power Dissipation (Max)	750 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Silicon N Channel MOSFET

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Package / Case	Vgs (Max)	Supplier Device Package	Operating Temperature	Power Dissipation (Max)	Technology	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation 2SK1482-T-AZ	30 V	1.5 A	Through Hole	230 pF	4 V	10 V	TO-226AA	TO-226-3 TO-92-3	20 V	TO-92	150 °C	750 W	MOSFET (Metal Oxide)	N-Channel	2.5 V	400 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The 2SK1482 is a Silicon N Channel MOSFET.

Technical documentation and resources