IXTX5N250
ActiveDISCMOSFET NCH STD-VERYHIVOLT TO-247AD/ TUBE
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IXTX5N250
ActiveDISCMOSFET NCH STD-VERYHIVOLT TO-247AD/ TUBE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXTX5N250 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 2500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 8560 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 Variant |
| Power Dissipation (Max) | 960 W |
| Rds On (Max) @ Id, Vgs | 8.8 Ohm |
| Supplier Device Package | PLUS247™-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTX5N250 Series
The Very High Voltage series of N-Channel Standard MOSFETs are specifically designed to address demanding, fast-switching power conversion applications requiring very high blocking voltages up to 4.5kV. Thanks to the positive temperature coefficient of their on-state resistance, these very high voltage MOSFETs are ideally suited for parallel device operation, which provides cost-effective solutions compared to series-connected, lower-voltage MOSFET ones. This also results in reduction in the associated gate drive circuitry, further simplifying the design, saving PCB board space, and improving the reliability of the overall system. Advantages: Easy to mount Space savings High power density
Documents
Technical documentation and resources