Discrete Semiconductor Products

QS6J3TR

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MOSFET 2P-CH 20V 1.5A TSMT6

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Discrete Semiconductor Products

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MOSFET 2P-CH 20V 1.5A TSMT6

Technical Specifications

Parameters and characteristics for this part

Specification	QS6J3TR

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	3 nC
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs [Max]	215 mOhm
Supplier Device Package	TSMT6 (SC-95)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power - Max [Max]	Vgs(th) (Max) @ Id	FET Feature	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Configuration	Technology	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor QS6J3TR	TSMT6 (SC-95)	SOT-23-6 Thin TSOT-23-6	3 nC	20 V	1.25 W	2 V	Logic Level Gate	Surface Mount	215 mOhm	1.5 A	150 °C	2 P-Channel	MOSFET (Metal Oxide)	270 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 1.5A 1.25W Surface Mount TSMT6 (SC-95)

Technical documentation and resources