Discrete Semiconductor Products

IRL530L

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MOSFET N-CH 100V 15A TO262-3

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 15A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRL530L

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	930 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)
Vishay General Semiconductor - Diodes Division IRL530L	TO-262-3	2 V	MOSFET (Metal Oxide)	160 mOhm	Through Hole	930 pF	15 A	4 V 5 V	100 V	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 15A (Tc) Through Hole TO-262-3

Technical documentation and resources