Discrete Semiconductor Products

2SCR543DTL

Active

BIPOLAR TRANSISTORS - BJT TRANS GP BJT NPN 50V 4A

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT TRANS GP BJT NPN 50V 4A

Technical Specifications

Parameters and characteristics for this part

Specification	2SCR543DTL

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	10 W
Supplier Device Package	CPT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Transistor Type	Mounting Type	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Rohm Semiconductor 2SCR543DTL	CPT3	180	10 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	350 mV	300 MHz	1 µA	NPN	Surface Mount	150 °C	4 A	50 V
Rohm Semiconductor 2SCR543RTL	TSMT3	180	1 W	SC-96	350 mV	300 MHz	1 µA	NPN	Surface Mount	150 °C	3 A	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 50 V 4 A 300MHz 10 W Surface Mount CPT3

Technical documentation and resources

No documents available