Discrete Semiconductor Products

RFG60P05E

Obsolete

MOSFET P-CH 50V 60A TO247-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 50V 60A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	RFG60P05E

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	450 nC
Input Capacitance (Ciss) (Max) @ Vds	7200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	215 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id
ON Semiconductor RFG60P05E	MOSFET (Metal Oxide)	-55 °C	175 ░C	50 V	TO-247-3	60 A	215 W	TO-247-3	30 mOhm	450 nC	20 V	7200 pF	Through Hole	10 V	P-Channel	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 50 V 60A (Tc) 215W (Tc) Through Hole TO-247-3

Technical documentation and resources

No documents available