Discrete Semiconductor Products

PMF290XN,115

Obsolete

MOSFET N-CH 20V 1A SOT323-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 1A SOT323-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMF290XN,115

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max] [x]	0.72 nC
Input Capacitance (Ciss) (Max) @ Vds	34 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	560 mW
Rds On (Max) @ Id, Vgs	350 mOhm
Supplier Device Package	SC-70
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max] [x]
Freescale Semiconductor - NXP PMF290XN,115	-55 °C	150 °C	SC-70 SOT-323	1 A	350 mOhm	20 V	MOSFET (Metal Oxide)	560 mW	1.5 V	34 pF	12 V	2.5 V 4.5 V	Surface Mount	SC-70	N-Channel	0.72 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 1A (Tc) 560mW (Tc) Surface Mount SC-70

Technical documentation and resources

No documents available