Discrete Semiconductor Products

PMF290XN,115

Obsolete

MOSFET N-CH 20V 1A SOT323-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 1A SOT323-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMF290XN,115

Current - Continuous Drain (Id) (Tc)	1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	0.72 nC
Input Capacitance (Ciss) (Max)	34 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-70, SOT-323
Package Name	SC-70
Power Dissipation (Max)	560 mW
Rds On (Max)	350 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

Part	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Rds On (Max)	Gate Charge (Max)	Technology	FET Type	Vgs(th) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package Name	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)
NXP USA Inc. PMF290XN,115	34 pF	-55 °C	150 °C	Surface Mount	350 mOhm	0.72 nC	MOSFET (Metal Oxide)	N-Channel	1.5 V	2.5 V	4.5 V	20 V	560 mW	SC-70	12 V	SC-70 SOT-323	1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 20 V 1A (Tc) 560mW (Tc) Surface Mount SC-70

Technical documentation and resources

No documents available