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onsemi-MJF47G GP BJT Trans GP BJT NPN 250V 1A 2000mW 3-Pin(3+Tab) TO-220FP Tube
Discrete Semiconductor Products

MJF18008G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 450 V, 8 A, 45 W, TO-220, THROUGH HOLE

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onsemi-MJF47G GP BJT Trans GP BJT NPN 250V 1A 2000mW 3-Pin(3+Tab) TO-220FP Tube
Discrete Semiconductor Products

MJF18008G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 450 V, 8 A, 45 W, TO-220, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

SpecificationMJF18008G
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]14
Frequency - Transition13 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]45 W
Supplier Device PackageTO-220FP
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700 mV
Voltage - Collector Emitter Breakdown (Max)450 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 2.92
DigikeyTube 1$ 3.57
10$ 2.33
100$ 1.63
500$ 1.33
1000$ 1.23
2000$ 1.15
NewarkEach 100$ 1.84
500$ 1.71
1000$ 1.53
2500$ 1.24
5000$ 1.20
ON SemiconductorN/A 1$ 1.23

Description

General part information

MJF18008 Series

The MJE/MJF18008G have an applications specific state-of-the-art die designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts.