Discrete Semiconductor Products
2N7002P,235
NRNDFreescale Semiconductor - NXP
MOSFET N-CH 60V 360MA TO236AB
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Discrete Semiconductor Products
2N7002P,235
NRNDFreescale Semiconductor - NXP
MOSFET N-CH 60V 360MA TO236AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N7002P,235 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 360 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) [Max] | 350 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 1.6 Ohm |
| Supplier Device Package | TO-236AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V |
2N7002NXBK Series
60 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) | Technology | Package / Case | Rds On (Max) @ Id, Vgs | Qualification | FET Feature | Configuration | Operating Temperature | Power - Max [Max] | Grade | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | 2.1 V | N-Channel | 10 V | 5 V | TO-236AB | -55 °C | 150 °C | 0.43 nC | Surface Mount | 20 pF | 300 mA | 190 mA | 1.33 W 265 mW | 60 V | 20 V | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 4.5 Ohm | |||||||||
 Freescale Semiconductor - NXP | 2.4 V | 6-TSSOP | 0.8 nC | Surface Mount | 50 pF | 320 mA | 60 V | MOSFET (Metal Oxide) | 6-TSSOP SC-88 SOT-363 | 1.6 Ohm | AEC-Q100 | Logic Level Gate | 2 N-Channel (Dual) | 150 °C | 420 mW | Automotive | |||||||||||
Freescale Semiconductor - NXP | 2.5 V | N-Channel | TO-236AB | -55 °C | 150 °C | 0.69 nC | Surface Mount | 50 pF | 475 mA | 60 V | 30 V | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 2 Ohm | 4.5 V 10 V | 830 mW | |||||||||||
Freescale Semiconductor - NXP | 2.1 V | N-Channel | 10 V | 5 V | TO-236AB | -55 °C | 150 °C | 1 nC | Surface Mount | 23.6 pF | 270 mA 330 mA | 1.67 W 310 mW | 60 V | 20 V | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 2.8 Ohm | ||||||||||
Freescale Semiconductor - NXP | 2.5 V | N-Channel | TO-236AB | -65 °C | 150 °C | Surface Mount | 50 pF | 300 mA | 60 V | 20 V | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 5 Ohm | AEC-Q101 | Automotive | 4.5 V 10 V | 830 mW | ||||||||||
 Freescale Semiconductor - NXP | 2.1 V | SOT-666 | 0.6 nC | Surface Mount | 50 pF | 340 mA | 60 V | MOSFET (Metal Oxide) | SOT-563 SOT-666 | 1.6 Ohm | AEC-Q101 | Logic Level Gate | 2 N-Channel (Dual) | 150 °C | 350 mW | Automotive | |||||||||||
Freescale Semiconductor - NXP | 2.1 V | N-Channel | TO-236AB | 0.6 nC | Surface Mount | 50 pF | 350 mA | 60 V | 20 V | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 1.6 Ohm | AEC-Q101 | 150 °C | Automotive | 10 V | |||||||||||
Freescale Semiconductor - NXP | 2.1 V | 6-TSSOP | 0.6 nC | Surface Mount | 50 pF | 300 mA | 60 V | MOSFET (Metal Oxide) | 6-TSSOP SC-88 SOT-363 | 1.6 Ohm | Logic Level Gate | 2 N-Channel (Dual) | 150 °C | 1.04 W | |||||||||||||
 Freescale Semiconductor - NXP | 2.4 V | N-Channel | SOT-323 | -55 °C | 150 °C | Surface Mount | 34 pF | 310 mA | 310 mW | 60 V | 20 V | MOSFET (Metal Oxide) | SC-70 SOT-323 | 1.6 Ohm | AEC-Q101 | Automotive | 4.5 V 10 V | 0.5 nC | |||||||||
Freescale Semiconductor - NXP | 2.4 V | N-Channel | TO-236AB | -55 °C | 150 °C | Surface Mount | 50 pF | 360 mA | 60 V | 20 V | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | 1.6 Ohm | AEC-Q101 | Automotive | 10 V | 350 mW |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.24 | |
| 10 | $ 0.16 | |||
| 100 | $ 0.08 | |||
| 500 | $ 0.07 | |||
| 1000 | $ 0.05 | |||
| 2000 | $ 0.04 | |||
| 5000 | $ 0.04 | |||
| Digi-Reel® | 1 | $ 0.24 | ||
| 10 | $ 0.16 | |||
| 100 | $ 0.08 | |||
| 500 | $ 0.07 | |||
| 1000 | $ 0.05 | |||
| 2000 | $ 0.04 | |||
| 5000 | $ 0.04 | |||
| Tape & Reel (TR) | 10000 | $ 0.02 | ||
Description
General part information
2N7002NXBK Series
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources