Discrete Semiconductor Products

PBLS2024D115

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TRANS PREBIAS 1PNP 1PNP 6-TSOP

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Discrete Semiconductor Products

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TRANS PREBIAS 1PNP 1PNP 6-TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PBLS2024D115

Current - Collector (Ic) (Max)	100 mA, 1.8 A
Current - Collector Cutoff (Max)	100 nA
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 hFE, 200
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Power - Max [Max]	760 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	6-TSOP
Transistor Type	1 PNP, 1 PNP Pre-Biased
Vce Saturation (Max) @ Ib, Ic	150 mV, 210 mV
Voltage - Collector Emitter Breakdown (Max)	20 V, 50 V

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max)	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Supplier Device Package	Mounting Type	Resistor - Emitter Base (R2)	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Power - Max [Max]	Current - Collector (Ic) (Max)
Freescale Semiconductor - NXP PBLS2024D115	SC-74 SOT-457	20 V 50 V	100 nA	1 µA	60 hFE 200	1 PNP 1 PNP Pre-Biased	6-TSOP	Surface Mount	22 kOhms	22 kOhms	150 mV 210 mV	130 MHz	760 mW	1.8 A 100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 PNP 50V, 20V 100mA, 1.8A 130MHz 760mW Surface Mount 6-TSOP

Technical documentation and resources