Discrete Semiconductor Products

UJ3D1220K2

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DIODE SIL CARB 1.2KV 20A TO247-2

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Discrete Semiconductor Products

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DIODE SIL CARB 1.2KV 20A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	UJ3D1220K2

Capacitance @ Vr, F	810 pF
Current - Reverse Leakage @ Vr	190 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	20 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type
Qorvo UJ3D1220K2	1.2 kV	500 mA	810 pF	0 ns	SiC (Silicon Carbide) Schottky	175 ░C	-55 °C	TO-247-2	TO-247-2	190 µA	20 A	1.7 V	Through Hole

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General part information

Diode 1200 V 20A Through Hole TO-247-2

Technical documentation and resources

No documents available