Discrete Semiconductor Products

NJD2873T4G

Active

2.0 A, 50 V NPN BIPOLAR POWER TRANSISTOR

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

2.0 A, 50 V NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	NJD2873T4G

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120 hFE
Frequency - Transition	65 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.68 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Package / Case	Frequency - Transition	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type
ON Semiconductor NJD2873RL	100 nA	1.68 W	300 mV	120 hFE	Surface Mount	2 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	65 MHz	DPAK	175 ░C	-65 °C	50 V	NPN
ON Semiconductor NJD2873T4G	100 nA	1.68 W	300 mV	120 hFE	Surface Mount	2 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	65 MHz	DPAK	175 ░C	-65 °C	50 V	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Bipolar Power Transistor is designed for low voltage, low power, high gain amplifier applications.